A custom bias tee design has been obtained with the assistance of accurate passive component models to accommodate pulsed-bias, pulsed-RF S-parameters measurements with pulse lengths on the order of 1 μs and lower. The simulation results for the time and frequency domains are found to compare remarkably well with the use of the models. 

An incremental design procedure for this circuit has been demonstrated, followed by the results of measuring pulsed IV characteristics through the bias tees. The pulsed IV results for the custom bias tees are far more accurate than those performed through commercially available bias tees, which are not normally designed to allow pulses to pass through the bias path. Finally, initial pulsed-bias, pulsed-RF S-parameter measurement results are shown and found to correlate with expectations. 

The design of custom bias tees for pulsed applications using accurate component models has provided first-pass success with the construction of this pulsed measurement system.